Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Address:
Martensstraße 5/7
91058 Erlangen


Related Project(s)

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20/12/2018 - 31/05/2020)


Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01/01/2018 - 31/12/2020)


MYCIGS: Energieertragsoptimierte Cu (In, Ga) (S,Se) 2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01/10/2017 - 30/09/2020)


(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)


Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)



Publications (Download BibTeX)

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Wellmann, P., Bickermann, M., Grau, M., Hofmann, H.-D., Straubinger, T., & Winnacker, A. (1999). Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging. Materials Research Society Symposium - Proceedings, 572, 259-264. https://dx.doi.org/10.1557/PROC-572-259
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1999). Giant magnetoresistance effect in a new hybrid granular ferromagnet semiconductor system - MnAs nanomagnets imbedded in LT-GaAs. In The physics of semiconductors – World Scientific, proceedings of ICPS24th conference (1999). Helsinki, FI.
Hofmann, H.-D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P., & Winnacker, A. (1999). Analysis on defect generation during the SiC bulk growth process. Materials Science and Engineering B-Advanced Functional Solid-State Materials, B61-62, 48-53. https://dx.doi.org/10.1016/S0921-5107(98)00443-7
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1998). Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure. Applied Physics Letters, 73(22), 3291-3293. https://dx.doi.org/10.1063/1.122748
Schmidt, K., Kunze, U., Medeiros-Ribeiro, G., Garcia, J., Wellmann, P., & Petroff, P. (1998). Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, 2(1-4), 627-631. https://dx.doi.org/10.1016/S1386-9477(98)00128-3
Garcia, J., Mankad, T., Holtz, O., Wellmann, P., & Petroff, P. (1998). Electronic states tuning of InAs self-assembled quantum dots. Applied Physics Letters, 72(24), 3172-3174. https://dx.doi.org/10.1063/1.121583
Wellmann, P., Schoenfeld, W., Garcia, J., & Petroff, P. (1998). Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique. Journal of Electronic Materials, 27(9), 1030-1033. https://dx.doi.org/10.1007/s11664-998-0158-4
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1998). Giant magnetoresistance in a low-temperature grown GaAs with imbedded MnAs nanomagnets. In Physics of Microstructured Semiconductors, Vol.6.
Van Esch, A., Van Bockstal, L., De Boeck, J., Verbanck, G., Van Steenbergen, A., Wellmann, P.,... Borghs, G. (1997). Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs. Physical Review B, 56(20), 13103-13112.
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1997). Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs. Applied Physics Letters, 71(17), 2532-2534. https://dx.doi.org/10.1063/1.120109
Wellmann, P., Feng, J.-L., Garcia, J., & Petroff, P. (1997). Formation and properties of nanosize ferromagnetic MnAs particles in low temperature GaAs by manganese implantation. Materials Research Society Symposium - Proceedings, 475, 49-54. https://dx.doi.org/10.1557/PROC-475-49
Wellmann, P., Winnacker, A., & Pensl, G. (1996). On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP. Materials Research Society Symposium - Proceedings, 422, 255-266. https://dx.doi.org/10.1557/PROC-422-255
Burchard, A., Deicher, M., Forkel-Wirth, D., Freidinger, J., Kerle, T., Magerle, R.,... Winnacker, A. (1995). Acceptor-hydrogen interaction in ternary III-V semiconductors. Materials Science Forum, 196-201, 987-991. https://dx.doi.org/10.4028/www.scientific.net/MSF.196-201.987
Waldmüller, S., Lang, M., Wellmann, P., & Winnacker, A. (1994). Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy. In IEEE (Eds.), Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) (pp. 231-234). Santa Barbara, CA, US.
Christ, H.-J., Künecke, U., Meyer, K., & Sockel, H.-G. (1988). Mechanisms of high-temperature corrosion in helium containing small amounts of impurities. II. Corrosion of the nickel-base alloy inconel 617. Oxidation of Metals, 30, 27-51. https://dx.doi.org/10.1007/BF00656643
Christ, H.-J., Künecke, U., Meyer, K., & Sockel, H.-G. (1987). High temperature corrosion of the nickel-based alloy Inconel 617 in helium containing small amounts of impurities. Materials Science and Engineering, 87, 161-168. https://dx.doi.org/10.1016/0025-5416(87)90374-0

Last updated on 2019-24-04 at 10:30