Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Adresse:
Martensstraße 5/7
91058 Erlangen


Forschungsprojekt(e)

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20.12.2018 - 31.05.2020)


Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01.01.2018 - 31.12.2020)


MYCIGS: Energieertragsoptimierte Cu(In,Ga)(S,Se)2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01.10.2017 - 30.09.2020)


(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01.01.2017 - 31.12.2020)


Analyse der Wachstumskinetik während der Hochtemperatur-Kristallzüchtung von SiC unter Anwendung der Computertomographie zur in-situ 3D Visualisierung der Wachstumsphasengrenze
Prof. Dr.-Ing. Peter Wellmann
(01.05.2016 - 30.04.2019)



Publikationen (Download BibTeX)

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Hassanien, A.E., Abdelhaleem, S., Ahmad, R., Schuster, M., Moustafa, S.H., Distaso, M.,... Wellmann, P. (2019). Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique. Journal of Nanoelectronics and Optoelectronics, 14(10), 1394-1400. https://dx.doi.org/10.1166/jno.2019.2633
Tarekegne, A.T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., & Ou, H. (2019). Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. Applied Physics B-Lasers and Optics, 125(9). https://dx.doi.org/10.1007/s00340-019-7279-8
Schöler, M., Brecht, C., & Wellmann, P. (2019). Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide. Materials, 12(15). https://dx.doi.org/10.3390/ma12152487
Arzig, M., Steiner, J., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals. Materials, 12(16). https://dx.doi.org/10.3390/ma12162591
Schuster, M., Stapf, D., Osterrieder, T., Barthel, V., & Wellmann, P. (2019). Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure. Coatings, 9, 1-16. https://dx.doi.org/10.3390/coatings9080484
Schuh, P., Steiner, J., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks. Materials, 12, 1-8. https://dx.doi.org/10.3390/ma12152353
Schöler, M., Schuh, P., Steiner, J., & Wellmann, P. (2019). Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base. Materials Science Forum, 963, 157-160. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.157
Schuh, P., Künecke, U., Litrico, G., Mauceri, M., La Via, F., Monnoye, S.,... Wellmann, P. (2019). Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates. Materials Science Forum, 963, 149-152. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.149
Salamon, M., Arzig, M., Uhlmann, N., & Wellmann, P. (2019). Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography. Materials Science Forum, 963, 5-9. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.5
Steiner, J., Roder, M., Nguyen, B.D., Sandfeld, S., Danilewsky, A., & Wellmann, P. (2019). Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC. Materials, 12(13). https://dx.doi.org/10.3390/ma12132207
Schuh, P., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth. Materials, 12(13). https://dx.doi.org/10.3390/ma12132179
Steiner, J., Arzig, M., Hsiao, T.C., & Wellmann, P. (2019). Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 42-45). Birmingham, GB: Trans Tech Publications Ltd.
Arzig, M., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 14-17). Birmingham, GB: Trans Tech Publications Ltd.
Steiner, J., Arzig, M., Denisov, A., & Wellmann, P. (2019). Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201900121
Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://dx.doi.org/10.1016/j.mssp.2018.10.028
Schöler, M., Lederer, M., & Wellmann, P. (2019). Deep electronic levels in n-type and p-type 3C-SiC. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 297-300). Birmingham, GB: Trans Tech Publications Ltd.
Arzig, M., Hsiao, T., & Wellmann, P. (2018). Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules. Advanced Materials Proceedings, 3(9), 540-543. https://dx.doi.org/10.5185/amp.2018/1414
Abdelhaleem, S., Hassanien, A., Ahmad, R., Schuster, M., Ashour, A., Distaso, M.,... Wellmann, P. (2018). Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique. Journal of Electronic Materials. https://dx.doi.org/10.1007/s11664-018-6636-4
Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21. https://dx.doi.org/10.1088/1361-6641/aad831
Kanazawa, Y., Fukumoto, Y., Uechi, S., Ohoyama, K., Lederer, M., Happo, N.,... Tsutsui, K. (2018). Enhancement of accuracy of neutron atomic resolution holography. In ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (pp. E404-E404). CHESTER: INT UNION CRYSTALLOGRAPHY.

Zuletzt aktualisiert 2019-24-04 um 10:30