Lehrstuhl für Angewandte Physik


Description:


Research at the Chair for Applied Physics is devoted to electrons in solids since its foundations in 1948. We pursue fundamental research, which paves the way for innovative electronics beyond silicon electronics. Our focus is on material systems with unusual properties like graphene (a single layer of graphite) for ultrafast electronics, single organic molecules as smallest units for electronic functionality, but also semiconductors with wide bandgap (e.g. Silicon carbide) for powere electronics. Particular emphasis is put on the interaction of matter and light, in particular in Terahertz spectral regime.


Address:
Staudtstraße 7
91058 Erlangen



Subordinate Organisational Units

Professur für Angewandte Physik


Research Fields

Charge transport on the molecular scale (Prof. Weber)
Graphene
Light-Matter Interaction in the Terahertz Range (Dr. Malzer, Prof. Weber)
Semiconductors: Dopands and Defects (Dr. Krieger, Prof. Weber)


Related Project(s)

Go to first page Go to previous page 1 of 2 Go to next page Go to last page

Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene
Prof. Dr. Heiko B. Weber
(01/04/2017)


Monolithic electronic circuits based on epitaxial graphene
Prof. Dr. Heiko B. Weber
(01/12/2013)


(SPP 1459: Graphen):
Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)
Prof. Dr. Heiko B. Weber
(01/10/2013)


(SFB 953: Synthetic Carbon Allotropes):
SFB 953: Graphene and Organic Molecules: Transport Experiments (B08)
Prof. Dr. Heiko B. Weber
(01/01/2012)


(Training NETwork on Functional Interfaces for SiC):
NetFISiC: Training NETwork on Functional Interfaces for SiC
Dr. Michael Krieger
(01/01/2009 - 31/12/2011)



Publications (Download BibTeX)

Go to first page Go to previous page 1 of 7 Go to next page Go to last page

Weiße, J., Hauck, M., Krieger, M., Bauer, A., & Erlbacher, T. (2019). Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC. AIP Advances, 9(5), 055308. https://dx.doi.org/10.1063/1.5096440
Hauck, M., & Krieger, M. (2019). Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs. Elektronikpraxis - Profiline, Sonderheft Leistungselektronik und Stromversorgungen I, 16-18.
Kißlinger, F., Rienmüller, D., Ott, C., Kampert, E., & Weber, H.B. (2019). Fractional Quantum Conductance Plateaus in Mosaic-Like Conductors and Their Similarities to the Fractional Quantum Hall Effect. Annalen Der Physik. https://dx.doi.org/10.1002/andp.201800188
Wild, S., Lloret, V., Vega-Mayoral, V., Vella, D., Nuin, E., Siebert, M.,... Hirsch, A. (2019). Monolayer black phosphorus by sequential wet-chemical surface oxidation. RSC Advances, 9(7), 3570-3576. https://dx.doi.org/10.1039/c8ra09069f
Berens, J., Rasinger, F., Aichinger, T., Heuken, M., Krieger, M., & Pobegen, G. (2019). Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET. IEEE Transactions on Electron Devices, 66(3), 1213-1217. https://dx.doi.org/10.1109/TED.2019.2891820
Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Communications Physics, 2, 5. https://dx.doi.org/10.1038/s42005-018-0102-8
Heide, C., Higuchi, T., Ullmann, K., Weber, H.B., & Hommelhoff, P. (2019). Lightwave-controlled electron dynamics in graphene. In EPJ Web Conf. (Eds.), 205 (pp. 05002).
Heide, C., Boolakee, T., Higuchi, T., Weber, H.B., & Hommelhoff, P. (2019). Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime. New Journal of Physics. https://dx.doi.org/10.1088/1367-2630/ab13ce
Xie, Y., Wang, G., Wang, Z., Nan, T., Wang, H., Wang, Y.,... Ma, X. (2019). Growth of Monolayer WS2Single Crystals with Atmospheric Pressure CVD: Role of Temperature. In MRS Advances (pp. 255-262). Materials Research Society.
Rasinger, F., Prohinig, J., Schulze, H., Schulze, H.J., & Pobegen, G. (2019). Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes. physica status solidi (a). https://dx.doi.org/10.1002/pssa.201900197
Heide, C., Higuchi, T., Weber, H.B., & Hommelhoff, P. (2018). Coherent Electron Trajectory Control in Graphene. Physical Review Letters, 121. https://dx.doi.org/10.1103/PhysRevLett.121.207401
Rühl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H.B. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113, 122102. https://dx.doi.org/10.1063/1.5045859
Niesner, D., Hauck, M., Shrestha, S., Levchuk, I., Matt, G., Osvet, A.,... Fauster, T. (2018). Structural fluctuations cause spin-split states in tetragonal (CH3NH3)PbI3 as evidenced by the circular photogalvanic effect. Proceedings of the National Academy of Sciences, 115(38), 9509-9514. https://dx.doi.org/10.1073/pnas.1805422115
Meingast, L., Kolesnik-Gray, M., Siebert, M., Abellan Saez, G., Wild, S., Lloret Segura, V.J.,... Krstic, V. (2018). Effect of TCNQ Layer Cover on Oxidation Dynamics of Black Phosphorus. Physica Status Solidi-Rapid Research Letters, 12(8). https://dx.doi.org/10.1002/pssr.201800179
Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://dx.doi.org/10.4028/MSF.924.277
Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. Materials Science Forum, 924, 184-187. https://dx.doi.org/10.4028/www.scientific.net/MSF.924.184
Preu, S., Müller-Landau, C., Malzer, S., Weber, H.B., Döhler, G., Winnerl, S.,... Gossard, A. (2018). Terahertz generation with ballistic photodiodes under pulsed operation. Semiconductor Science and Technology, 33(11). https://dx.doi.org/10.1088/1361-6641/aae5e4
Kißlinger, F., Popp, M.A., Jobst, J., Shallcross, S., & Weber, H.B. (2017). Charge-carrier transport in large-area epitaxial graphene. Annalen Der Physik, 2017. https://dx.doi.org/10.1002/andp.201700048
Leitherer, S., Brana Coto, P., Ullmann, K., Weber, H.B., & Thoss, M. (2017). Charge Transport in C60-based Single-Molecule Junctions with Graphene Electrodes. Nanoscale, 9(21), 7217-7226. https://dx.doi.org/10.1039/C7NR00170C
Vecera, P., Eigler, S., Kolesnik-Gray, M., Krstic, V., Vierck, A., Maultzsch, J.,... Hirsch, A. (2017). Degree of functionalisation dependence of individual Raman intensities in covalent graphene derivatives. Scientific Reports, 7. https://dx.doi.org/10.1038/srep45165

Last updated on 2019-24-04 at 10:16