Semiconductor Science and Technology
Journal Abbreviation: SEMICOND SCI TECH
ISSN: 0268-1242
Publisher: Institute of Physics: Hybrid Open Access
Publications (36)
High mobility Ge 2DHG based MODFETs for low-temperature applications (2023)
Weißhaupt D, Funk HS, Oehme M, Bloos D, Berkmann F, Seidel L, Fischer IA, Schulze J
Journal article
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel (2020)
Strempel K, Roemer F, Yu F, Meneghini M, Bakin A, Wehmann HH, Witzigmann B, Waag A
Journal article
Delay analysis of high-electron mobility transistors under high drain bias (2020)
Reiser K, Twynam J, Brech H, Weigel R
Journal article
Transition to the quantum hall regime in InAs nanowire cross-junctions (2019)
Gooth J, Borg M, Schmid H, Bologna N, Rossell MD, Wirths S, Moselund K, et al.
Journal article
Electrical characterization of n-doped SiGeSn diodes with high Sn content (2018)
Clausen CJ, Fischer IA, Weisshaupt D, Baerwolf F, Tillack B, Colston G, Myronov M, et al.
Journal article
Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/Si x Ge1-x-ySn y heterostructure model for low power FET applications (2018)
Elogail Y, Fischer IA, Wendav T, Schulze J
Journal article
Review of SiC crystal growth technology (2018)
Wellmann P
Journal article, Review article
Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111) (2018)
Bechler S, Kern M, Funk HS, Colston G, Fischer IA, Weisshaupt D, Myronov M, et al.
Journal article
Thickness and temperature dependent thermoelectric properties of Bi87Sb13 nanofilms measured with a novel measurement platform (2018)
Linseis , Voelklein F, Reith H, Huehne R, Schnatmann L, Nielsch K, Woias P
Journal article
Ex situ n+ doping of GeSn alloys via non-equilibrium processing (2018)
Prucnal S, Berencen Y, Wang M, Rebohle L, Boettger R, Fischer IA, Augel L, et al.
Journal article