Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

ISSN: 0734-211X
Verlag: American Institute of Physics


Heftnummer: 1, Band: 29, Seitenbereich: 01AB08
Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress (2011)
Erlbacher T, Yanev VC, Rommel M, et al.

Heftnummer: 3, Band: 28, Seitenbereich: 595-607
Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques (2010)
Rommel M, Spoldi G, Yanev V, et al.

Zuletzt aktualisiert 2014-11-12 um 07:18