Materials Science Forum

Journal Abbreviation: MATER SCI FORUM
ISSN: 0255-5476
Publisher: Trans Tech Publications



Publications

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Volume: 924, Pages range: 184-187
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices (2018)
Weiße J, Hauck M, Sledziewski T, et al.

Volume: 924, Pages range: 277-280
Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs (2018)
Rasinger F, Pobegen G, Aichinger T, et al.

Volume: 924, Pages range: 245-248
Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules (2018)
Arzig M, Salamon M, Uhlmann N, et al.

Volume: 897, Pages range: 15-18
3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers (2017)
Schuh P, Litrico G, La Via F, et al.

Volume: 897, Pages range: 665-668
Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET (2017)
Albrecht M, Hürner A, Erlbacher T, et al.

Journal issue: 897, Pages range: 618-621
Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration (2017)
Matthus C, Erlbacher T, Schöfer B, et al.

Journal issue: 897, Pages range: 622-625
Optimization of 4H-SiC photodiodes as selective UV sensors (2017)
Matthus C, Burenkov A, Erlbacher T

Volume: 858, Pages range: 301
Doping of 4H-SiC with group IV elements (2016)
Krieger M, Rühl M, Śledziewski T, et al.

Volume: 858, Pages range: 33-36
High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C (2016)
Fahlbusch L, Schöler M, Mattle P, et al.


Last updated on 2016-14-01 at 13:31