Materials Science Forum

Journal Abbreviation: MATER SCI FORUM
ISSN: 0255-5476
Publisher: Trans Tech Publications



Publications

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Volume: 963, Pages range: 5-9
Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019)
Salamon M, Arzig M, Uhlmann N, et al.

Volume: 963 MSF, Pages range: 114-118
Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019)
Heidorn C, Esteve R, Höchbauer T, et al.

Volume: 963 MSF, Pages range: 386-389
Channeling in 4H-SiC from an application point of view (2019)
Pichler P, Sledziewski T, Häublein V, et al.

Volume: 963 MSF, Pages range: 490-493
Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019)
Śledziewski T, Erlbacher T, Bauer A, et al.

Volume: 963 MSF, Pages range: 297-300
Deep electronic levels in n-type and p-type 3C-SiC (2019)
Schöler M, Lederer M, Wellmann P

Volume: 963 MSF, Pages range: 763-767
Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019)
Schlichting H, Sledziewski T, Bauer AJ, et al.

Volume: 963 MSF, Pages range: 629-632
Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019)
Weiße J, Mitlehner H, Frey L, et al.

Volume: 963 MSF, Pages range: 549-552
Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes (2019)
Rusch O, Moult J, Erlbacher T

Volume: 963 MSF, Pages range: 123-126
New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor (2019)
Höchbauer T, Heidorn C, Tsavdaris N


Last updated on 2016-14-01 at 13:31