Chemical Vapor Deposition

Journal Abbreviation: CHEM VAPOR DEPOS
ISSN: 0948-1907
Publisher: Wiley-VCH Verlag


Volume: 17, Pages range: 15-21
Methylated [(benzene)(1,3-butadiene)Ru0] derivatives as novel MOCVD precursors with favorable properties (2011)
Jipa I, Siddiqi MA, Siddiqui RA, et al.

Volume: 17, Pages range: 177-+
Stoichiometry of Nickel Oxide Films Prepared by ALD (2011)
Bachmann J, Zolotaryov A, Albrecht O, et al.

Volume: 16, Pages range: 239-247
[cis-(1,3-diene) 2W(CO) 2] complexes as MOCVD precursors for the deposition of thin tungsten - Tungsten carbide films (2010)
Jipa I, Heinemann F, Schneider A, et al.

Journal issue: 2-3, Volume: 13, Pages range: 105-111
MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications (2007)
Ryssel H, Jank M, Bauer A, et al.

Journal issue: 8-9, Volume: 12, Pages range: 557-561
Growth of silicon carbide bulk crystals with a modified physical vapor transport technique (2006)
Müller R, Künecke U, Queren D, et al.

Journal issue: 8-9, Volume: 12, Pages range: 463-464
Silicon carbide CVD for electronic device applications (2006)
Wellmann P, Pons M

Last updated on 2015-29-05 at 16:45