Semiconductors: Dopands and Defects (Dr. Krieger, Prof. Weber)


Organisation:
Lehrstuhl für Angewandte Physik

FAU Contact:
Krieger, Michael Dr.
Weber, Heiko B. Prof. Dr.

Description:


Silicon carbide



Silicon carbide (SiC) appears in different crystal structures, so-called polytypes. Based on its superior physical properties, this semiconductor is suited for high power electronic devices being able to operate also under harsh environmental conditions.



At the Chair of Applied Physics, SiC single crystals and SiC devices are investigated by electrical and optical analysis methods. In particular, we focus on electrical and optical properties of defects, which can purposefully be engineered by process technologies like ion implantation, oxidation, etc. We develop new methodology to gain improved access to the metal-semiconductor contact and underlying defects via transparent graphene electrodes.



We intensely collaborate with a number of local and international research institutes and also with semiconductor companies.


Related Project(s)


Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene
Prof. Dr. Heiko B. Weber
(01/04/2017)
Monolithic electronic circuits based on epitaxial graphene
Prof. Dr. Heiko B. Weber
(01/12/2013)
(Training NETwork on Functional Interfaces for SiC):
NetFISiC: Training NETwork on Functional Interfaces for SiC
Dr. Michael Krieger
(01/01/2009 - 31/12/2011)
(Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates):
MANSiC: Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
Gerhard Pensl
(01/01/2007 - 31/12/2010)



Assigned publications


Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Communications Physics, 2, 5. https://dx.doi.org/10.1038/s42005-018-0102-8
Berens, J., Rasinger, F., Aichinger, T., Heuken, M., Krieger, M., & Pobegen, G. (2019). Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET. IEEE Transactions on Electron Devices, 66(3), 1213-1217. https://dx.doi.org/10.1109/TED.2019.2891820
Rühl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H.B. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113, 122102. https://dx.doi.org/10.1063/1.5045859
Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://dx.doi.org/10.4028/MSF.924.277
Krieger, M., Rühl, M., Śledziewski, T., Ellrott, G., Palm, T., Weber, H.B., & Bockstedte, M.G. (2016). Doping of 4H-SiC with group IV elements. Materials Science Forum, 858, 301. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.301
Hertel, S., Waldmann, D., Jobst, J., Albert, A., Albrecht, M., Krieger, M.,... Weber, H.B. (2012). Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nature Communications, 3, 957. https://dx.doi.org/10.1038/ncomms1955
Waldmann, D., Jobst, J., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2011). Bottom-gated epitaxial graphene. Nature Materials, 10, 357-360. https://dx.doi.org/10.1038/nmat2988

Last updated on 2019-22-01 at 18:02