Institute of Semiconductors

Research facility


Location: Beijing, China (CN) CN

ISNI: 000000040632513X

ROR: https://ror.org/048dd0611

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

Tandem Nanostructures: A Prospective Platform for Photoelectrochemical Water Splitting (2022) Liu J, Zhao H, Wang Z, Hannappel T, Kramm UI, Etzold BJ, Lei Y Journal article, Review article Improvement of Thermal Endurance for Integrated Millimeter-Wave Silicon IMPATT Device in μm2-Scale (2020) Zhang W, Yu J, Schulze J, Kasper E Conference contribution An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications (2019) Lin L, Ou Y, Jokubavicius V, Syväjärvi M, Liang M, Liu Z, Yi X, et al. Journal article, Original article