Leibniz Institute for Crystal Growth / Leibniz-Institut für Kristallzüchtung


Research facility

Location:
Berlin, Germany


Publications in cooperation with FAU scientists


Hens, P., Wagner, G., Hölzing, A., Hock, R., & Wellmann, P. (2012). Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100). Thin Solid Films, 522, 2-6. https://dx.doi.org/10.1016/j.tsf.2011.10.177
Hens, P., Jokubavicius, V., Liljedahl, R., Wagner, G., Yakimova, R., Wellmann, P., & Syväjärvi, M. (2012). Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds. Materials Letters, 67(1), 300-302. https://dx.doi.org/10.1016/j.matlet.2011.09.109
Guguschev, C., Goetze, J., & Göbbels, M. (2010). Cathodoluminescence microscopy and spectroscopy of synthetic ruby crystals grown by the optical floating zone technique. American Mineralogist, 95(4), 449-455. https://dx.doi.org/10.2138/am.2010.3291

Last updated on 2016-23-06 at 08:54