Institut National Polytechnique de Grenoble - Grenoble Institute of Technology

University / College


Location: Grenoble, France (FR) FR

ISNI: 0000000417654326

ROR: https://ror.org/05sbt2524

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Evaluation of MRI to Ultrasound Registration Methods for Brain Shift Correction: The CuRIOUS2018 Challenge (2020) Xiao Y, Maier A, Wein W, Shams R, Kadoury S, Drobny D, Modat M, et al. Journal article Elastic excitations in BaTiO3 single crystals and ceramics: Mobile domain boundaries and polar nanoregions observed by resonant ultrasonic spectroscopy (2013) Salje EKH, Carpenter MA, Nataf GF, Picht G, Webber KG, Weerasinghe J, Lisenkov S, Bellaiche L Journal article Silicon carbide growth: C/Si ratio evaluation and modeling (2009) Pons M, Nishizawa SI, Wellmann P, Blanquet E, Chaussende D, Dedulle J, Madar R Journal article, Original article Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution (2008) Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, et al. Journal article Status of SiC bulk growth processes (2007) Chaussende D, Wellmann P, Pons M Journal article Numerical modeling and experimental verification of modified-PVT crystal growth of SiC (2007) Wellmann P, Pons M Journal article Vapor growth of SiC bulk crystals and its challenge of doping (2006) Wellmann P, Müller R, Queren D, Sakwe A, Pons M Journal article Silicon carbide CVD for electronic device applications (2006) Wellmann P, Pons M Journal article, Editorial Special Issue on Silicon Carbid CVD for Electronic Device Applications (2006) Wellmann P, Pons M Edited Volume SiC epitaxial structure growth: evaluation and modeling (2006) Nishizawa SI, Wellmann P, Pons M Book chapter / Article in edited volumes