Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics

Research facility

Freiburg, Germany

Publications in cooperation with FAU scientists

Erlbacher, T., Huerner, A., Zhu, Y., Bach, L., Schletz, A., Zuerbig, V.,... Frey, L. (2018). Electrical properties of schottky-diodes based on B doped diamond. (pp. 931-934). Trans Tech Publications Ltd.
Schimmel, S., Künecke, U., Meisel, M., Hertweck, B., Steigerwald, T., Nebel, C.,... Wellmann, P. (2016). Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides. Journal of Crystal Growth, 456, 33-42.
Quay, R., Frey, L., Heckel, T., Endruschat, A., Eckardt, B., Reiner, R.,... Ambacher, O. (2016). Slew rate control of a 600 V 55 mΩ GaN cascode. In IEEE (Eds.), (pp. 334-339). Fayetteville, AR, US: Institute of Electrical and Electronics Engineers Inc..
Müller, R., Künecke, U., Weingärtner, R., Maier, M., & Wellmann, P. (2006). Anomalous charge carrier transport phenomena in highly aluminum doped SiC. Physica Status Solidi C: Conferences, 3(3), 554-557.
Schmitt, H., Müller, R., Maier, M., Winnacker, A., & Wellmann, P. (2005). Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals. Materials Science Forum, 483, 445-448.
Müller, R., Desperrier, P., Seitz, C., Weißer, M., Magerl, A., Maier, M.,... Wellmann, P. (2004). In-situ Er-doping of SiC bulk single crystals. Materials Science Forum, 457-460, 723-726.
Seemann, K., Ramberger, S., Tessmann, A., Quay, R., Schneider, J., Rießle, M.,... Schlechtweg, M. (2003). Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. (pp. 383-386). München: IEEE Computer Society.
Kirste, L., Göbbels, M., & Roth, G. (2000). Die Hollanditphase im System BaO-Al2O3-MgO-TiO2. European Journal of Mineralogy, 12, 94.

Last updated on 2016-09-11 at 15:27