Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics


Research facility

Location:
Freiburg, Germany


Publications in cooperation with FAU scientists


Erlbacher, T., Huerner, A., Zhu, Y., Bach, L., Schletz, A., Zuerbig, V.,... Frey, L. (2018). Electrical properties of schottky-diodes based on B doped diamond. In Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (pp. 931-934). Trans Tech Publications Ltd.
Schimmel, S., Künecke, U., Meisel, M., Hertweck, B., Steigerwald, T., Nebel, C.,... Wellmann, P. (2016). Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides. Journal of Crystal Growth, 456, 33-42. https://dx.doi.org/10.1016/j.jcrysgro.2016.08.067
Endruschat, A., Heckel, T., Reiner, R., Waltereit, P., Quay, R., Ambacher, O.,... Frey, L. (2016). Slew rate control of a 600 V 55 mΩ GaN cascode. In IEEE (Eds.), Proceedings of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 (pp. 334-339). Fayetteville, AR, US: Institute of Electrical and Electronics Engineers Inc..
Müller, R., Künecke, U., Weingärtner, R., Maier, M., & Wellmann, P. (2006). Anomalous charge carrier transport phenomena in highly aluminum doped SiC. Physica Status Solidi C: Conferences, 3(3), 554-557. https://dx.doi.org/10.1002/pssc.200564150
Schmitt, H., Müller, R., Maier, M., Winnacker, A., & Wellmann, P. (2005). Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals. Materials Science Forum, 483, 445-448. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.445
Müller, R., Desperrier, P., Seitz, C., Weißer, M., Magerl, A., Maier, M.,... Wellmann, P. (2004). In-situ Er-doping of SiC bulk single crystals. Materials Science Forum, 457-460, 723-726. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.723
Seemann, K., Ramberger, S., Tessmann, A., Quay, R., Schneider, J., Rießle, M.,... Schlechtweg, M. (2003). Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. (pp. 383-386). München: IEEE Computer Society.
Kirste, L., Göbbels, M., & Roth, G. (2000). Die Hollanditphase im System BaO-Al2O3-MgO-TiO2. European Journal of Mineralogy, 12, 94.

Last updated on 2016-09-11 at 15:27