Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics

Research facility

Location: Freiburg, Germany (DE)

ISNI: 0000000404942548

ROR: https://ror.org/0083ncs46

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Publications

(11)

Research Grants

(3)

Single crystal diamond pyramids for applications in nanoscale quantum sensing (2020) Batzer M, Shields B, Neu E, Widmann C, Giese C, Nebel C, Maletinsky P Journal article Nitrogen-Vacancy Based Spectroscopy and Control of the Local Paramagnetic Spin Bath in Nitrogen-15 Delta-Doped Diamond (2018) Bohm F, Sadzak N, Widmann C, Nebel C, Benson O Conference contribution Electrical properties of schottky-diodes based on B doped diamond (2018) Erlbacher T, Huerner A, Zhu Y, Bach L, Schletz A, Zuerbig V, Pinti L, et al. Conference contribution Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides (2017) Schimmel S, Meisel M, Hertweck B, Steigerwald T, Nebel C, Alt N, Schlücker E, Wellmann P Conference contribution, Abstract of a poster Slew rate control of a 600 V 55 mΩ GaN cascode (2016) Endruschat A, Heckel T, Reiner R, Waltereit P, Quay R, Ambacher O, März M, et al. Conference contribution, Conference Contribution Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides (2016) Schimmel S, Künecke U, Meisel M, Hertweck B, Steigerwald T, Nebel C, Alt N, et al. Journal article, Original article Anomalous charge carrier transport phenomena in highly aluminum doped SiC (2006) Müller R, Künecke U, Weingärtner R, Maier M, Wellmann P Journal article Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals (2005) Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P Journal article, Original article In-situ Er-doping of SiC bulk single crystals (2004) Müller R, Desperrier P, Seitz C, Weißer M, Magerl A, Maier M, Winnacker A, Wellmann P Journal article, Original article Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology (2003) Seemann K, Ramberger S, Tessmann A, Quay R, Schneider J, Rießle M, Walcher H, et al. Conference contribution

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