Infineon Technologies AG


Industry / private company

Location:
Neubiberg, Germany


Research projects with FAU researchers


(TRR 89: Invasive Computing):
TCPA_INT: Integration and Coupling of Tightly Coupled Processor Arrays (T01)
PD Dr.-Ing. Frank Hannig; Prof. Dr.-Ing. Jürgen Teich
(01/03/2017 - 29/02/2020)
(Spitzencluster Medical Valley, Verbund Intelligente Sensori):
IS-05: SmartSensorsB: Investigation of a millimeter wave sensor for non-invasive blood parameter detection
Prof. Dr.-Ing. Georg Fischer; Maximilian Hofmann; Kurt Emmerich Höller
(01/07/2010 - 30/06/2014)
DIANA: Erweiterte Diagnosefähigkeit in Halbleiterbauelementen und übergeordneten Systemen zur verbesserten Analysierbarkeit von permanenten und sporadischen Elektronikausfällen im Gesamtsystem Automobil
Prof. Dr.-Ing. Jürgen Teich
(01/05/2010 - 30/04/2013)
(Nanoelectronics for Mobile Ambient Living (AAL) Systems):
MAS: Nanoelectronics for Mobile Ambient Living (AAL) Systems
Prof. Dr.-Ing. Georg Fischer
(01/04/2010 - 31/03/2013)


Publications in cooperation with FAU scientists


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Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2019). A 20.7% PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS. In Proceedings of the European Microwave Week. Paris, FR.
Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2019). A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS. In Proceedings of the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Orlando, FL, US.
Rasinger, F., Prohinig, J., Schulze, H., Schulze, H.J., & Pobegen, G. (2019). Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes. physica status solidi (a). https://dx.doi.org/10.1002/pssa.201900197
Völkel, M., Thouabtia, M., Breun, S., Aufinger, K., Weigel, R., & Hagelauer, A. (2019). A Signal Source Chip at 140 GHz and 160 GHz for Radar Applications in a SiGe Bipolar Technology. In Proceedings of the MWSCAS. Dallas, US.
Heidorn, C., Esteve, R., Höchbauer, T., Krieger, M., Weber, H.B., & Rupp, R. (2019). Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 114-118). Birmingham, GB: Trans Tech Publications Ltd.
Rimmelspacher, J., Werthof, A., Weigel, R., Geiselbrechtinger, A., & Issakov, V. (2019). Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured up to 110 GHz. In Proceedings of the Automated RF Techniques Group (ARFTG) Microwave Measurement Symposium. Orlando, FL, US.
Aguilar, E., Issakov, V., & Weigel, R. (2019). Highly-Integrated <0.14 mm2D-Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology. In 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019. Orlando, FL, US: Institute of Electrical and Electronics Engineers Inc..
Issakov, V., Ciocoveanu, R., Weigel, R., Geiselbrechtinger, A., & Rimmelspacher, J. (2019). Highly-Integrated Low-Power 60 GHz Multichannel Transceiver for Radar Applications in 28 nm CMOS. In IEEE MTT-S International Microwave Symposium Digest (pp. 650-653). Boston, MA, US: Institute of Electrical and Electronics Engineers Inc..
Rimmelspacher, J., Weigel, R., Hagelauer, A., & Issakov, V. (2019). LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. In Proceedings of the Radio & Wireless Week (RWW): Silicon Monolithic Inegrated Circuits in RF Systems (SiRF). Orlando, FL, US.
Rimmelspacher, J., Weigel, R., Hagelauer, A., & Issakov, V. (2018). 30 % Frequency-Tuning-Range 60 GHz Push-Push VCO in 28 nm Bulk CMOS Technology. In Proceedings of the Radio & Wireless Week 2018. Anaheim, California, USA, US.
Ciocoveanu, R., Weigel, R., Hagelauer, A., Geiselbrechtinger, A., & Issakov, V. (2018). 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS. In 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS. Kyoto International Conference Center, Kyoto, Japan, JP.
Rimmelspacher, J., Weigel, R., Hagelauer, A., & Issakov, V. (2018). 60 GHz Tail-Node-Coupled Multi-Core Push-Push VCOs in 22 nm FD SOI CMOS Technology. In Proceedings of the European Microwave Conference 2018. Madrid, ES.
Völkel, M., Borutta, K., Dietz, M., Aufinger, K., Weigel, R., & Hagelauer, A. (2018). A 110-135 GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology. In Matthias Völkel (Eds.), Proceedings of the Asia-Pacific Microwave Conference (pp. 1-3). Koyoto.
Ciocoveanu, R., Rimmelspacher, J., Weigel, R., Hagelauer, A., & Issakov, V. (2018). A 1.8-mW Low Power, PVT-Resilient, High Linearity, modified Gilbert-Cell Down-Conversion Mixer in 28-nm CMOS. In Proceedings of the Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 19-22). Anaheim, USA.
Dietz, M., Bauch, A., Aufinger, K., Weigel, R., & Hagelauer, A. (2018). A 1 to 32 GHz broadband multi-octave receiver for monolithic integrated vector network analyzers in SiGe technology. International Journal of Microwave and Wireless Technologies, 10(5-6), 717-728. https://dx.doi.org/10.1017/S175907871800079X
Rimmelspacher, J., Weigel, R., & Issakov, V. (2018). A 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology for Integrated Phased-Array Radar Applications. In Proceedings of the PHAROS Event. Bordeaux, FR.
Rimmelspacher, J., Hagelauer, A., Weigel, R., & Issakov, V. (2018). A 60 GHz Push-Push Voltage-Controlled Oscillator with Adaptive Gate Biasing in 28 nm Bulk CMOS Technology. In Proceedings of the International Microwave Symposium 2018. Philadelphia, Pennsylvania, USA.
Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2018). A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS. In A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS. San Diego, California, USA, US.
Umar, Z., Engelsberger, F.X., Wojnowski, M., Hagelauer, A., & Weigel, R. (2018). Analysis of Low Profile Ferrite Material Based Planar Shell Core Inductor. In 2018 IEEE 20TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC) (pp. 634-637). Singapore, SG: NEW YORK: IEEE.
Rimmelspacher, J., Weigel, R., Hagelauer, A., & Issakov, V. (2018). A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with -101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and -187 dBc/Hz FoMT. In Proceedings of the European Solid-State Circuits Conference (ESSCIRC). Dresden, DE.

Last updated on 2013-02-07 at 12:11