Award year: 2016
Category: Other Award
Awarding organization: SEMIKRON Stiftung
The award recognizes the development of a newly designed photoluminescence scanner for the detection of material defects in electronic devices fabricated on the semiconductor silicon carbide. The scanner was developed in the framework of the project SiC-WinS, funded by the Bavarian Research Foundation BFS. It produces PL images of whole SiC wafers including partly processed device structures at high spatial resolutions. Critical devices, which could fail during later operation, are identified and marked. The non-destructive and contactless measurement of a 6 inch wafer requires less than 30 minutes and can be repeated after certain process steps.