The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability - Becker, Tom; et al. (Trans Tech Publications Ltd, 2023)
Keywords: MOSFETs; Non-Radiative Multi-Phonon Model; Hysteresis; Interface Traps; TCAD Modeling; Border Traps; 4H-SiC