Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs - Huerner, A.; Heckel, T.; Endruschat, A.; Erlbacher, T.; Bauer, A. J.; Frey, Lothar (International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, 2018)
Keywords: SiC; Gate-voltage; MOSFET; Body-diode