Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2 - Mueller, Johannes; Boescke, Tim S.; Schroeder, Uwe; Hoffmann, Raik; Mikolajick, Thomas; Frey, Lothar (IEEE Electron Device Letters, 2012)
Keywords: Hafnium oxide; metal-ferroelectric-insulator- semiconductor (MFIS) FET; nonvolatile memory