Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy - Hauck, Martin; Weiße, Julietta; Lehmeyer, Johannes; Pobegen, Gregor; Weber, Heiko B.; Krieger, Michael (Materials Science Forum, 2016)
Keywords: MOSFET; drain current DLTS; Hall effect in MOS channel; interface traps; NITs; POA