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@article{faucris.120076044,
abstract = {In this work, we analyze compensating defects which are formed after
implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and
subsequent thermal annealing. These defects reduce the expected free
charge carrier density by 84% for a low doped layer with [Al]impl ≈ 9·1016 cm-3 and by 27 % for a high doped layer with [Al]impl ≈ 2·1019 cm-3.
Furthermore, an electrical activation ratio of implanted aluminum ions
of 100 % is calculated. The ionization energy of implanted aluminum as
measured by Hall effect and admittance spectroscopy ranges from 101 meV
to 305 meV depending on the doping concentratio},
author = {Weiße, Julietta and Hauck, Martin and Sledziewski, Tomasz and Tschiesche, Mattias and Krieger, Michael and Bauer, Anton and Mitlehner, Heinz and Frey, Lothar and Erlbacher, Tobias},
doi = {10.4028/www.scientific.net/MSF.924.184},
faupublication = {yes},
journal = {Materials Science Forum},
keywords = {Activation; Admittance Spectroscopy; Aluminium Implantation; Compensation; Hall Effect; Ionization Energy; Secondary Ion Mass Spectrometry (SIMS)},
pages = {184-187},
peerreviewed = {Yes},
title = {{Analysis} of {Compensation} {Effects} in {Aluminum}-{Implanted} {4H}-{SiC} {Devices}},
volume = {924},
year = {2018}
}